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| TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : RDS (ON) = 5.4 m (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 20 13 52 2.4 1.0 220 13 0.24 150 -55 to 150 Unit V V V A W W mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation Drain power dissipation Weight: 0.080 g (typ.) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 TPC8003 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 52.1 125 Unit C/W C/W Marking (Note 5) TPC8003 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 13 A Note 4: Reptitve rating: pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin 1. Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 2004-07-06 TPC8003 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 6.5 A VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min -- -- 30 15 0.8 -- -- 10.5 -- -- -- -- Typ. -- -- -- -- -- 8.3 5.4 21 4380 500 890 14 Max 10 10 -- -- 2.5 13 7 -- -- -- -- -- pF Unit A A V V V m m S Turn-on time Switching time Fall time ton -- 27 -- ns tf -- 72 -- Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD 24 V, VGS = 10 V, ID = 13 A -- -- -- -- 235 90 60 30 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition -- IDR = 13 A, VGS = 0 V Min -- -- Typ. -- -- Max 52 -1.2 Unit A V Forward voltage (diode) 3 2004-07-06 TPC8003 4 2004-07-06 TPC8003 5 2004-07-06 TPC8003 6 2004-07-06 |
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